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LDMOS FIELD EFFECT TRANSISTOR
NE55410GR
N-CHANNEL SILICON POWER LDMOS FET FOR 2 W + 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
DESCRIPTION
The NE55410GR is an N-channel enhancement-mode LDMOS FET designed for driver 0.1 to 2.6 GHz PA, such as, cellular base station amplifier, analog/digital TV-transmitters, and the other PA's. This product has two different FET's on one die manufactured using our NEWMOS technology (our WSi gate lateral MOS FET), and its nitride surface passivation and quadruple layer aluminum silicon metalization offer a high degree of reliability.
FEATURES
* Two different FET's (Q1 : Pout = 2 W, Q2 : Pout = 10 W) in one package * Over 25 dB gain available by connecting two FET's in series : GL (Q1) = 13.5 dB TYP. (VDS = 28 V, IDset (Q1) = 20 mA, f = 2 140 MHz) : GL (Q2) = 11.0 dB TYP. (VDS = 28 V, IDset (Q2) = 100 mA, f = 2 140 MHz) * High 1 dB compression output power : PO (1 dB) (Q1) = 35.4 dBm TYP. (VDS = 28 V, IDset (Q1) = 20 mA, f = 2 140 MHz) : PO (1 dB) (Q2) = 40.4 dBm TYP. (VDS = 28 V, IDset (Q2) = 100 mA, f = 2 140 MHz) * High drain efficiency * Low intermodulation distortion * Single Supply (VDS : 3 V < VDS 30 V) * Excellent Thermal Stability * Surface mount type and Super low cost plastic package : 16-pin plastic HTSSOP * Integrated ESD protection * Excellent stability against HCI (Hot Carrier Injection) : d (Q1) = 52% TYP. (VDS = 28 V, IDset (Q1) = 20 mA, f = 2 140 MHz) : d (Q2) = 46% TYP. (VDS = 28 V, IDset (Q2) = 100 mA, f = 2 140 MHz) : IM3 (Q1) = -40 dBc TYP. (VDS = 28 V, IDset (Q1+Q2) = 120 mA, f = 2 132.5/2 147.5 MHz, Pout = 33 dBm (2 tones) )
APPLICATION
* Digital cellular base station PA : W-CDMA/GSM/D-AMPS/PDC/N-CDMA/PCS etc. * UHF-band TV transmitter PA
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
Document No. PU10542EJ02V0DS (2nd edition) Date Published June 2005 CP(K)
The mark
shows major revised points.
NE55410GR
ORDERING INFORMATION
Part Number NE55410GR Order Number NE55410GR-T3-AZ Package 16-pin plastic HTSSOP (Pb-Free)
Note
Marking 55410
Supplying Form * Embossed tape 12 mm wide * Pin 1 and 8 indicates pull-out direction of tape * Qty 1 kpcs/reel
Note With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact your nearby sales office. Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: NE55410GR
PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM
(Top View)
S
Pin No. 1 Pin Name Source Drain (Q2) Drain (Q2) Drain (Q2) Drain (Q2) Source Gate (Q1) Source Pin No. 9 10 11 12 13 14 15 16 Pin Name Source Gate (Q1) Source Drain (Q1) Source Gate (Q2) Gate (Q2) Source
9 10 11 12 13 14 15 16
S
Q1
S
8 7
2 3 4 5 6 7 8
S S S
S
6 5 4 3 2
Q2
S
S
S
1
S
Remark All the terminals of a Q2 connected to a circuit. Backside : Source (S)
ABSOLUTE MAXIMUM RATINGS (TA = +25C, unless otherwise specified)
Parameter Drain to Source Voltage Gate to Source Voltage Drain Current (Q1) Drain Current (Q2) Total Device Dissipation (Tcase = 25C) Input Power (Q1) Input Power (Q2) Channel Temperature Storage Temperature Symbol VDS VGS ID (Q1) ID (Q2) Ptot Pin (Q1) Pin (Q2) Tch Tstg f = 2.14 GHz, VDS = 28 V f = 2.14 GHz, VDS = 28 V Test Conditions Ratings 65 7 0.25 1.0 40 0.3 1.5 150 -65 to +150 Unit V V A A W W W C C
2
Data Sheet PU10542EJ02V0DS
NE55410GR
THERMAL RESISTANCE (TA = +25C)
Parameter Channel to Case Resistance Symbol Rth (ch-c) Test Conditions MIN. - TYP. 2.5 MAX. 3.0 Unit C/W
RECOMMENDED OPERATING CONDITIONS (TA = +25C)
Parameter Drain to Source Voltage Gate to Source Voltage Input Power (Q1), CW Input Power (Q2), CW Symbol VDS VGS Pin (Q1) Pin (Q2) MIN. - 2.7 - - TYP. 28 3.3 15 20 MAX. 30 3.7 23 30 Unit V V dBm dBm
ELECTRICAL CHARACTERISTICS (TA = +25C)
Parameter Q1 Gate to Source Leak Current Drain to Source Leakage Current Gate Threshold Voltage Transconductance Drain to Source Breakdown Voltage Q2 Gate to Source Leak Current Drain to Source Leakage Current Gate Threshold Voltage Transconductance Drain to Source Breakdown Voltage IGSS (Q2) IDSS (Q2) Vth (Q2) gm (Q2) VGSS = 5V VDSS = 65 V VDS = 10 V, IDS = 1 mA VDS = 28 V, IDS = 100 mA - - 2.0 - 65 - - 2.6 0.45 75 1 1 3.2 - - IGSS (Q1) IDSS (Q1) Vth (Q1) gm (Q1) VGSS = 5V VDSS = 65 V VDS = 10 V, IDS = 1 mA VDS = 28 V, IDS = 20 mA - - 2.2 - 65 - - 2.8 0.09 75 1 1 3.4 - - Symbol Test Conditions MIN. TYP. MAX. Unit
A
mA V S V
BVDSS (Q1) IDSS = 10 A
A
mA V S V
BVDSS (Q2) IDSS = 10 A
Data Sheet PU10542EJ02V0DS
3
NE55410GR
RF CHARACTERISTICS (TA = +25C)
Parameter Q1 Gain 1 dB Compression Output Power Drain Efficiency Linear Gain Q2 Gain 1 dB Compression Output Power Drain Efficiency Linear Gain Gain 1 dB Compression Output Power Drain Efficiency Linear Gain Q1 + Q2 Gain 1 dB Compression Output Power Drain Efficiency Linear Gain Gain 1 dB Compression Output Power Drain Efficiency Output Power Linear Gain 3rd Order Intermodulation Distortion Drain Efficiency PO (1 dB) f = 880 MHz, VDS = 28 V, IDset = 120 mA (Q1 + Q2) Pin = 5 dBm f = 2 140 MHz, VDS = 28 V, IDset = 120 mA (Q1 + Q2) Pin = 16 dBm Pin = 10 dBm f = 2 132.5/2 147.5 MHz, VDS = 28 V, 2 carrier W-CDMA 3GPP, Test Model1, 64DPCH, 67% Clipping, IDset = 120 mA (Q1 + Q2), Ave Pout = 33 dBm - - - - 34 39 24 - - 41.5 55 30 40.0 42 40 25 -40 21 - - - - - - - - - dBm % dB dBm % dB dB dBc % PO (1 dB) f = 2 140 MHz, VDS = 28 V, IDset = 100 mA Pin = 20 dBm f = 1 840 MHz, VDS = 28 V, IDset = 100 mA Pin = 20 dBm - - 9.5 - - - 40.4 46 11 40.5 49 14 - - - - - - dBm % dB dBm % dB PO (1 dB) f = 2 140 MHz, VDS = 28 V, IDset = 20 mA Pin = 15 dBm - - 12 35.4 52 13.5 - - - dBm % dB Symbol Test Conditions MIN. TYP. MAX. Unit
d
GL
d
GL PO (1 dB)
d
GL
d
GL PO (1 dB)
d
Pout GL IM3
d
4
Data Sheet PU10542EJ02V0DS
NE55410GR
TYPICAL CHARACTERISTICS (TA = +25C, VDS = 28 V, IDset = 120 mA, unless otherwise specified)
3rd/5th Order Intermodulation Distortion IM3/IM5 (dBc)
GAIN, DRAIN EFFICIENCY, vs. OUTPUT POWER
36 34 32 f = 840 MHz 860 MHz 880 MHz 900 MHz 920 MHz G 30 28 26 24 22 20 20 25 30 35 40 50 40 80 70
IM3/IM5 vs. 2 TONES OUTPUT POWER
-10
Lower Upper
-20 IM3 -30 -40 -50 -60 -70 15
CW, f = 960 MHz, 1 MHz Spacing
60
d
30 20 10 0 45
Drain Efficiency d (%)
Gain G (dB)
IM5
20
25
30
35
40
45
Output Power Pout (dBm)
2 tones Output Power Pout (dBm)
GAIN, DRAIN EFFICIENCY, vs. OUTPUT POWER
30 28 26 G 24 22 20 18 16 14 20 25 30 50 40 80 70 60
d
f = 2.09 GHz 2.11 GHz 2.14 GHz 2.17 GHz 2.19 GHz 35 40
30 20 10 0 45
Output Power Pout (dBm)
3rd/5th Order Intermodulation Distortion IM3/IM5 (dBc)
IM3/IM5, DRAIN EFFICIENCY, vs. 2 TONES OUTPUT POWER
-20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 15 20 25 30 35 40
Lower Upper
100 90 IM3 IM5 W-CDMA 3GPP, Test Model 1, 64 DPCH, 67% Clipping, Center Frequency 2.14GHz, 15 MHz spacing
70 60 50 40
d
30 20 10 0 45
2 tones Output Power Pout (dBm)
Remark The graphs indicate nominal characteristics.
Data Sheet PU10542EJ02V0DS
Drain Efficiency d (%)
80
Drain Efficiency d (%)
Gain G (dB)
5
NE55410GR
S-PARAMETERS
S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form (S2P) that enables direct import to a microwave circuit simulator without keyboard input. Click here to download S-parameters. [RF and Microwave] [Device Parameters] URL http://www.ncsd.necel.com/
6
Data Sheet PU10542EJ02V0DS
NE55410GR
EVALUATION CIRCUIT (f = 840 to 960 MHz, VDS = 28 V, IDset = 120 mA)
VDS (+28 V) + B 6.8 k 47F
0.22 F 1 k
2.2 k
NE55410GR TL5
0.001 F
(open)7 RFin TL1 47 pF TL2 15 TL3 10
Q1 12
TL4 47 pF
TL6
TL7
A
S 3 pF 14 Q2 2 3 4 5 TL12 TL13 6 pF 2 pF 2 pF TL14 TL15 TL16 TL17 TL18 RFout
TL8 A 15 pF 10 2.2 nH 56 nH
TL9
TL10
TL11
TL19
15 S
47 pF
9 pF
12 pF
4 pF
S SSSSSS S 1 6 8 9 11 13 16 (Back side) 0.22 F
18 0.047 F 1 k
6.8 k
B
Symbol TL1 TL2 TL3 TL4 TL5 TL6 TL7 TL8 TL9 TL10
Width (mm) Length (mm) 1.0 4.5 0.5 0.5 1.0 1.0 1.0 1.0 1.0 1.0 3.0 10.0 16.0 5.0 48.0 4.0 3.0 6.0 3.0 4.0
Symbol TL11 TL12 TL13 TL14 TL15 TL16 TL17 TL18 TL19
Width (mm) Length (mm) 1.0 1.0 0.8 1.0 1.0 1.0 1.0 1.0 1.0 3.0 5.0 48.0 6.5 10.5 9.5 10.0 6.0 3.0
The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
Data Sheet PU10542EJ02V0DS
7
NE55410GR
EVALUATION CIRCUIT (f = 840 to 960 MHz, VDS = 28 V, IDset = 120 mA)
VGS (Q1), +28 V 6.8 k 0.22 F 2.2 k 15 47 F VDS (Q2), +28 V
1 k (Valiable) RF in 0.22 F
47 pF 6 pF 47 pF 2 pF
12 pF 3 pF
55410
4 pF
2 pF 2.2 nH 15 pF 1.5 pF 47 pF RF out
0.001 F
18
10
56 nH
1 k (Valiable)
6.8 k
0.047 F
9 pF
VDS (Q1), +28 V
VGS (Q2), +28 V
8
Data Sheet PU10542EJ02V0DS
NE55410GR
EVALUATION CIRCUIT (f = 2 090 to 2 190 MHz, VDS = 28 V, IDset = 120 mA)
VDS (+28 V) + B 6.8 k 22 F
0.22 F 1 k
TL3
NE55410GR TL8
0.22 F
10 RFin TL1 47 pF 8.5 pF TL12 0.75 pF 10 12 nH TL14 1 pF 2 pF TL2 TL4 TL5
7 (open) TL6 10
Q1 12
TL7 33 pF
TL9
TL10
TL11
A
S 1 pF 14 15 S Q2 2 3 4 5 TL15 TL17 TL18 TL19 TL20 TL21 RFout
A
TL13
15 pF TL16 3 pF 1 pF
S SSSSSS S 1 6 8 9 11 13 16 (Back side) 0.22 F
10
0.22 F 1 k
6.8 k
B
Symbol TL1 TL2 TL3 TL4 TL5 TL6 TL7 TL8 TL9 TL10 TL11
Width (mm) Length (mm) 1.0 1.0 1.0 1.0 1.0 0.5 0.5 1.0 1.0 4.5 1.0 17.0 4.0 24.5 2.5 3.0 2.5 4.5 25.5 2.5 4.5 3.5
Symbol TL12 TL13 TL14 TL15 TL16 TL17 TL18 TL19 TL20 TL21
Width (mm) Length (mm) 1.0 1.0 1.0 2.5 1.0 1.0 5.0 5.0 1.0 1.0 4.0 4.5 25.0 2.5 27.0 2.0 4.0 2.0 12.5 5.5
The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
Data Sheet PU10542EJ02V0DS
9
NE55410GR
EVALUATION CIRCUIT (f = 2 090 to 2 190 MHz, VDS = 28 V, IDset = 120 mA)
VGS (Q1), +28 V 1 k 6.8 k (Valiable) 0.22 F 10 VDS (Q2), +28 V 22 F
0.22 F RF in 15 pF 0.5 pF 2 pF 33 pF
55410
3 pF 1 pF
1.0 pF
0.22 F 12 nH 10
RF out
15 pF 0.75 pF 10 1 pF 0.22 F 1 k (Valiable) 6.8 k
VDS (Q1), +28 V
VGS (Q2), +28 V
10
Data Sheet PU10542EJ02V0DS
NE55410GR
PACKAGE DIMENSIONS 16-PIN PLASTIC HTSSOP (UNIT: mm)
6.40.3
0.200.10
(1.8)
0.650.1
(0.4)
9
8
55410
NEC
0.200.10
5.50.3
16
1
(0.1)
5.20.2
0.90.2
(2.5)
(1.5)
Remark ( ): Reference value
LAND PATTERN (UNIT: mm)
6.40 5.20 0.10
0.20 0.40
0.50
0.28
0.24
0.28
0.65
0.50
0.28
1.15
0.24
0.50
1.50 4.00 0.48
Remarks1. Via holes : 158 holes 2. Hole size : 0.25 mm 3. Min. spacing : 0.354 mm 4. : Solder resist or etching
1.00
0.20
1.50
5.50
(2.7)
(0.5)
Data Sheet PU10542EJ02V0DS
11
NE55410GR
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions. methods and conditions other than those recommended below, contact your nearby sales office.
Soldering Method Infrared Reflow Soldering Conditions Peak temperature (package surface temperature) Time at peak temperature Time at temperature of 220C or higher Preheating time at 120 to 180C Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) Wave Soldering Peak temperature (molten solder temperature) Time at peak temperature Maximum number of flow processes Maximum chlorine content of rosin flux (% mass) Partial Heating Peak temperature (terminal temperature) Soldering time (per side of device) Maximum chlorine content of rosin flux (% mass) : 260C or below : 10 seconds or less : 60 seconds or less : 12030 seconds : 3 times : 0.2%(Wt.) or below : 260C or below : 10 seconds or less : 1 time : 0.2%(Wt.) or below : 350C or below : 3 seconds or less : 0.2%(Wt.) or below HS350 WS260 Condition Symbol IR260
For soldering
Preheating temperature (package surface temperature) : 120C or below
Caution Do not use different soldering methods together (except for partial heating).
12
Data Sheet PU10542EJ02V0DS
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Subject: Compliance with EU Directives
CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix -A indicates that the device is Pb-free. The -AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. This status is based on CEL's understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information.
Restricted Substance per RoHS Lead (Pb) Mercury Cadmium Hexavalent Chromium PBB PBDE Concentration Limit per RoHS (values are not yet fixed) < 1000 PPM < 1000 PPM < 100 PPM < 1000 PPM < 1000 PPM < 1000 PPM Concentration contained in CEL devices -A Not Detected Not Detected Not Detected Not Detected Not Detected Not Detected -AZ (*)
If you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative.
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